? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c -100 v v dgr t j = 25 c to 150 c, r gs = 1m -100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 52 a i dm t c = 25 c, pulse width limited by t jm -130 a i ar t c = 25 c - 52 a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-3p,to-220,to-247) 1.13/10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g to-220 3.0 g to-263 2.5 g ds99912a(5/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss -10 a v gs = 0v t j = 125 c -150 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 50 m polarp tm power mosfet p-channel enhancement mode avalanche rated ixta52p10p IXTH52P10P ixtp52p10p ixtq52p10p v dss = - 100v i d25 = - 52a r ds(on) 50 m features: z international standard packages z fast intrinsic diode z dynamic dv/dt rated z avalanche rated z rugged polarp tm process z low q g and r ds(on) characterization z low drain-to-tab capacitance z low package inductance - easy to drive and to protect applications: z hight side switching z push-pull amplifiers z dc choppers z current regulators z automatic test equipment advantages: z low gate charge results in simple drive requirement z improved gate, avalanche and dynamic dv/dt ruggedness z high power density z fast switching z easy to parallel g = gate d = drain s = source tab = drain to-263 (i xta ) g s d (tab) to-247 (ixth) to-220 (i xtp ) d g s g d s to-3p (ixtq) g d s d (tab) d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta52p10p IXTH52P10P ixtp52p10p ixtq52p10p ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 12 20 s c iss 2845 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 1015 pf c rss 275 pf t d(on) 22 ns t r 29 ns t d(off) 38 ns t f 22 ns q g(on) 60 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 17 nc q gd 23 nc r thjc 0.42 c/w r thcs (to-3p)(to-247) 0.21 c/w (to-220) 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 52 a i sm repetitive, pulse width limited by t jm - 200 a v sd i f = - 26a, v gs = 0v, note 1 - 3.5 v t rr 120 ns q rm 0.53 c i rm - 8.9 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) i f = - 26a, -di/dt = -100a/ s v r = - 50v, v gs = 0v
? 2008 ixys corporation, all rights reserved ixta52p10p IXTH52P10P ixtp52p10p ixtq52p10p dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 to-247 (ixth) outline terminals: 1 - gate 2 - drain e ? p 1 2 3 to-3p (ixtq) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline
ixys reserves the right to change limits, test conditions, and dimensions. ixta52p10p IXTH52P10P ixtp52p10p ixtq52p10p fig. 1. output characteristics @ 25oc -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 v ds - volts i d - amperes v gs = -10v - 9v - 5 v - 6 v - 7 v - 8 v fig. 2. extended output characteristics @ 25oc -130 -110 -90 -70 -50 -30 -10 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 v ds - volts i d - amperes v gs = -10v - 8 v - 6 v - 7 v - 5 v - 9 v fig. 3. output characteristics @ 125oc -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 v ds - volts i d - amperes v gs = -10v - 9v - 6 v - 5v - 7 v - 8 v fig. 5. r ds(on) normalized to i d = - 26a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes fig. 4. r ds(on) normalized to i d = - 26a vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 26 a i d = - 52 a
? 2008 ixys corporation, all rights reserved ixta52p10p IXTH52P10P ixtp52p10p ixtq52p10p fig. 7. input admittance -70 -60 -50 -40 -30 -20 -10 0 -8.0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = - 40oc 25oc 125oc fig. 8. transconductance 0 4 8 12 16 20 24 28 32 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -160 -140 -120 -100 -80 -60 -40 -20 0 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v gs - volts v ds = - 50v i d = - 26a i g = -1ma fig. 11. capacitance 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit @ v gs = -15v 10ms dc, 100ms - - -- - -
ixys reserves the right to change limits, test conditions, and dimensions. ixta52p10p IXTH52P10P ixtp52p10p ixtq52p10p ixys ref: t_52p10p(b5)3-25-08-b fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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